500mw 100 volt silicon s wit ch in g diode dl 41 4 8 suggested solder pad layout features ? low current leakage ? compression bond construction ? low cost ? surface mount applications dimensions inches mm dim min max min max note a .134 .142 3.40 3.60 b .008 .016 .20 .40 c . 055 .0 59 1.40 1.50 ? maximum ratings ? o pe r ating t e m pe r atu r e: - 5 5 c to +1 50 c ? sto r age t e m pe r atu r e: -5 5 c to +1 50 c ? maximum thermal resistance; 35 c/w junction to ambient electrical characteristics @ 25 c unless otherwise specified reverse voltage v r 75v peak reverse voltage v rm 100v average rectified current i o 150ma resistive load f > 50hz power dissipation p tot 500mw junction temperature t j 1 50 c peak forward surge current i fsm 500 m a t <1s maximum instantaneous forward voltage v f 1.0v i fm = 10 m a; t j = 25 c* maximum dc reverse current at rated dc blocking voltage i r 5. 0 a 50 a v r =20volts t j = 25 c t j = 150 c typical junction capacitance c j 4pf measured at 1.0mhz, v r =4.0v reverse recovery time t rr 4ns i f =10ma v r = 6 v r l =100 ? *pulse test: pulse width 300 sec, duty cycle 2% a b c cat h ode m a www. mccsemi .com . 165 .0 75 . 0 30 v r = 20v v r = 75v 25 n a minimelf
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admissable power dissipation - milliwatts versus ambient temperature - c figure 2 forward derating curve 0 17550 75 100 125 0 100 200 300 single phase, half wave 60hz resistive or inductive load milliwatts c 150 400 500 600 junction capacitance - pf versus reverse voltage - volts instantaneous forward current - amperes versus instantaneous forward voltage - volts figure 1 typical forward characteristics 4 6 20 10 milliamps .4 .6 .8 1.0 1 .2 1.4 .01 .02 .04 .06 .1 .2 .4 .6 1 2 25 c volts figure 3 junction capacitance .1 .2 1.4 2 10 20 404 100 200 .1 .2 .6 1 2 10 pf volts 6 4 .4 400 1000 t j =25 c www. mccsemi .com mcc dl4 1 48
1 100 4 0 100 200 300 8 figure 5 peak forward surge current peak forward surge current - amperes versus number of cycles at 60hz - cycles milliamps cycles 2 6 10 20 60 80 40 400 500 600 figure 4 typical reverse characteristics instantaneous reverse leakage current - nanoamperes versus junction temperature - c t j 40 60 200 100 nanoamp 20 120 40 60 80 100 .1 .2 .4 .6 1 2 4 6 10 20 t a =25 c 400 600 1000 140 t a =100 c DL4148 www. mccsemi .com mcc
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